讲座通知：Preparation and Characterization of Nanostructured Metal Oxide Thin Films
- in 学术科研
- by 张震
题目：Preparation and Characterization of Nanostructured Metal Oxide Thin Films
Interest in growth of metal oxide (MX) thin films has been stimulated by a variety of technical applications such as optical and electrical devices, catalysis, gas sensing, hydrogen permeation barriers, fuel cells and solar energy conversion. One of representative MX (Er2O3) thin films has been first prepared using Si (100) substrates by ion beam sputter deposition at 700oC at a pressure of < 10-7 torr and in-situ annealing at 750oC at a pressure of < 10-9 torr. Er silicides formed during the deposition are eliminated via the annealing, which results in the single phase and the smooth surface of the Er2O3 thin films. Hydrogen diffusivity in Er2O3 thin films with different thickness was well elucidated by nuclear reaction analysis. The silicide phase of ErSi2 appears again when an annealing temperature is higher than 800oC. Density functional theory (DFT) calculations suggest that the spin polarized surface electronic density of states may be absent when Er comes at the surface of single-phase nanocrystalline Er2O3 thin films. Also, H migration behaviors in the Er2O3 thin films are predicted by DFT calculations, effectively complementing the experimental results.