周圣军

武汉大学 机械工程系 副教授

Email: zhousj@whu.edu.cn

 

研究方向

柔性/软体机器人;传感器;第三代半导体材料与器件;激光制造与3D打印;纳米压印与激光直写技术;集成电路制造装备及成套工艺

 

教育背景

美国密歇根大学(University of Michigan, Ann Arbor)   2014.07-2015.07

● 电子工程与计算机系(EECS),Research Fellow

上海交通大学                                    2011.12 –2014.03

              ●  机械工程博士后流动站点 博士后 

上海交通大学                                    2008.9 -2011.12

● 专业:微电子学与固体电子学 博士 

        武汉理工大学                                    2005.09 -2008.07

● 专业:机械电子工程 硕士 

        武汉理工大学                                    2001.09 -2005.07

● 专业:电子科学与技术 本科

工业界经历

广东量晶光电科技有限公司 (LED外延和芯片制造企业,10台MOCVD设备) 

2011年12月-2014年5月

 ● 担任研发主管,负责广东量晶光电科技有限公司的大功率LED芯片及高压LED芯片的研发和产业化工作。2014年,我负责研发的大功率LED芯片的发光效率达到175 lm/W@350 mA。

佛山国星光电股份有限公司 (中国最大的LED封装上市企业之一) 

2006年7月-2007年12月

● 担任项目主管,研制全自动SMD LED在线测试分选设备,负责研发的LED在线测试分选设备已经应用于多家LED封装企业的产品生产线。

所获荣誉与奖项

2017   楚天学者

2016   ICEPT 2016 国际学术会议组织委员会共同主席

2015   武汉大学珞珈青年学者

2012   上海交通大学博士后年度考核优秀

2011   上海交通大学优秀博士学位论文

2010   60th ECTC国际学术会议杰出贡献奖

2010   台湾光华基金会奖学金

2009   湖北省优秀硕士学位论文

2008   武汉理工大学优秀硕士学位论文

发表论文(第一作者和通讯作者)

1.      Shengjun Zhou, Xingtong Liu, Yilin Gao, Yingce Liu, Zongyuan Liu, Chengqun Gui, and Sheng Liu, GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts, Scientific Reports, 2017. (Under review)

2.      Shengjun Zhou, Xingtong Liu, Yilin Gao, Dongyue Liu, Mengling Liu, Xinghuo Ding, Ruiqing Wang, Chengqun Gui, Sheng Liu, A comparative study of highly reflective ITO/DBR and Ni/Ag ohmic contacts for application in GaN-based flip-chip light-emitting diodes, Optics & Laser Technology, 2017. (Under review)

3.      Shengjun Zhou, Yilin Gao, Chenju Zheng, Yingce Liu, Hongpo Hu, Jiajiang Lv, and Xingtong Liu, A comparative study of GaN-based direct current and alternating current high voltage light-emitting diodes, Physica Status Solidi A, 2017. (Under review)

4.      Chengqun Gui, Xinghuo Ding, Shengjun Zhou* (Corresponding author), Yilin Gao, Xingtong Liu, Sheng Liu,“Nanoscale Ni/Au wire grids as transparent conductive electrodes in ultraviolet light-emitting diodes by laser direct writing” Optics & Laser Technology2017

5.      Mengling Liu, Shengjun Zhou* (Corresponding author), Xingtong Liu, Yilin Gao, and Xinghuo Ding,High-power AlGaN-based flip-chip ultraviolet LEDs with Ta2O5/SiO2 distributed Bragg reflector and two-level metallization electrodes,Japanese Journal of Applied Physics,2017. (Under review)

6.      Xingtong Liu, Shengjun Zhou* (Corresponding author), Yilin Gao, Hongpo Hu, Yingce Liu, Chengqun Gui and Sheng Liu,“Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs”, Applied optics, 2017. (Under review)

7.      Shengjun Zhou, Hongpo Hu, Xingtong Liu, Mengling Liu, Xinghuo Ding, Chengqun Gui, Sheng Liu, and L. Jay Guo, A comparative study of GaN-based ultraviolet LEDs grown on different sized patterned sapphire substrates with sputtered AlN nucleation layer, Japanese Journal of Applied Physics, 2017.

8.      Shengjun Zhou, Mengling Liu, Hongpo Hu, Yilin Gao, Xingtong Liu, Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes, Optics & Laser Technology 97, 137 (2017). (SCI).

9.      Mengling Liu, Yilin Gao, Hongpo Hu, Xingtong Liu, Jiajiang Lv, Chenju Zheng, Xinghuo Ding, and Shengjun Zhou* (Corresponding author), Effect of interdigitated SiO2 current blocking layer on external quantum efficiency of high power LEDs, Chinese Journal of Luminescence 38, 6 (2017). (EI).

10.  Sheng Liu, Chenju Zheng, Jiajiang Lv, Mengling Liu, Shengjun Zhou* (Corresponding author), Effect of high-temperature/current stress on the forward tunneling current of InGaN/GaN high-power blue light-emitting diodes, Japanese Journal of Applied Physics 56, 081001 (2017). (SCI)

11.  Xinghuo Ding, Chengqun Gui, Hongpo Hu, Mengling Liu, Xingtong Liu, Jiajiang Lv, Shengjun Zhou* (Corresponding author), Reflectance bandwidth and efficiency improvement of light-emitting diodes with double distributed bragg reflector, Applied Optics 56, 4375 (2017). (SCI)

12.  Chenju Zheng, Jiajiang Lv, Shengjun Zhou* (Corresponding author), and Sheng Liu, Improvement of Luster Consistency between the p-Pad and the n-Pad of GaN-Based Light-Emitting Diodes via the Under-Etching Process, Journal of the Korean Physical Society 70, 765 (2017). (SCI)

13.  Hongpo Hu, Shengjun Zhou* (Corresponding author), Xingtong Liu, Yilin Gao, Chengqun Gui, Sheng Liu, Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes, Scientific Reports 7, 44627 (2017). (SCI)

14.  Shengjun Zhou, Chenju Zheng, Jiajiang Lv, Yilin Gao, Ruiqing Wang, Sheng Liu, “GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction,” Optics & Laser Technology 92, 95–100 (2017). (SCI)

15.  Shengjun Zhou, Xingtong Liu, “Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes,” Physica Status Solidi A 214, 1600782 (2017). (SCI)

16.  Jiajiang Lv, Chenju Zheng, Quan Chen, Shengjun Zhou* (Corresponding author), and Sheng Liu, “High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes”, Physica Status Solidi A 213, 3150-3156 (2016). (SCI)

17.  Shengjun Zhou, Chenju Zheng, Jiajiang Lv, Yingce Liu, Shu Yuan, Sheng Liu, and Han Ding, “Effect of profile and size of isolation trench on the optical and electrical performance of GaN-based high-voltage LEDs,” Applied Surface Science 366, 299-303(2016). (SCI)

18.  Jiajiang Lv, Chenju Zheng, Shengjun Zhou*(Corresponding author), Fang Fang, and Shu Yuan, “Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step-like ITO and wavy sidewalls,” Physica Status Solidi A 213, 1181-1186(2016). (SCI)

19.  Shengjun Zhou, Shu Yuan, L. Jay Guo, Sheng Liu, and Han Ding, “Highly efficient and reliable high power LEDs patterned sapphire substrate and strip-shaped distributed current blocking layer,” Applied Surface Science 355, 1013-1019(2015). (SCI)

20.  Shengjun Zhou, Bin Cao, Shu Yuan, and Sheng Liu, “Enhanced luminous efficiency of phosphor-converted LEDs by using back reflector to increase reflectivity for yellow light,” Applied Optics 53, 8104-8110(2014). (SCI)

21.  Shengjun Zhou, Shu Yuan, Sheng Liu, and Han Ding, “Improved light output power of LEDs with embedded air voids structure and SiO2 current blocking layer,” Applied Surface Science 305, 252–258(2014). (SCI)

22.  Shengjun Zhou, Shufang Wang, Sheng Liu, and Han Ding. High Power GaN-based LEDs with Low Optical Loss Electrode Structure. Optics & Laser Technology 54, 321(2013). (SCI)

23.  Shengjun Zhou, Fang Fang, Bin Cao, Sheng Liu, and Han Ding, Enhancement in light output power of LEDs with reflective current blocking layer and backside hybrid reflector. Science China Technological Sciences 56, 1544(2013). (SCI)

24.  Shengjun Zhou, Sheng Liu, and Han Ding. Enhancement in light extraction of LEDs with SiO2 current blocking layer deposited on naturally textured p-GaN surface. Optics & Laser Technology 47, 127(2013). (SCI)

25.  Bin Cao, Shengjun Zhou, and Sheng Liu. Effects of ITO Pattern on the Electrical and Optical Characteristics of LEDs. ECS Journal of Solid State Science and Technology 2, R24 (2013). (SCI)

26.  Bin Cao, Shuiming Li, Run Hu, Shengjun Zhou, Yi Sun, Zhiying Gan, and Sheng Liu. Effects of Current Crowding on Light Extraction Efficiency of Conventional GaN-Based Light-emitting Diodes. Optics Express 21, 25381 (2013). (SCI)

27.  Shengjun Zhou, Bin Cao, Sheng Liu, Han Ding. Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO. Optics & Laser Technology 44, 2302 (2012). (SCI)

28.  Shengjun Zhou, Bin Cao and Sheng Liu. Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED. Applied Physics A: Materials Science & Processing 104, 369 (2011). (SCI)

29.  Quan Chen, Xiaobing Luo, Shengjun Zhou, and Sheng Liu. Dynamic Junction Temperature Measurement for High Power LEDs. Review of Scientific Instruments 82, 084904 (2011). (SCI)

30.  Shengjun Zhou, Bin Cao and Sheng Liu. Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas. Applied Surface Science 257, 905 (2010). (SCI)

31.  Shengjun Zhou, and Sheng Liu. Transient measurement of light-emitting diode characteristic parameters for production lines. Review of Scientific Instruments 80, 095102 (2009). (SCI)

32.  Shengjun Zhou, and Sheng Liu. Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching. Applied Surface Science 255, 9469 (2009). (SCI)

33.  Shengjun Zhou, Shunsheng Guo, and Binhai Yu. Design of Testing System for LED Optoeletronic Parameter Based on LabVIEW. Semiconductor Optoelectronics 28, 501(2007). (EI)

34.  周圣军, 郭顺生, 余彬海. 表面贴装LED光电参数测试分选系统的研制. 仪表技术与传感器8, 108(2008)

35.  Shengjun Zhou, Sheng liu, and Bin Cao. Through silicon via-hole-based thin-film light emitting diodes. 60th Electronic Components and Technology Conference (ECTC), 2010 (Oral Presentation). (EI)

36.  Shengjun Zhou, Qin Zhang, Bin Cao, Sheng Liu. Evaluation of GaN-based Blue Light Emitting Diodes Based on Temperature/Humidity Accelerated Tests. 11th International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 (Poster Presentation). (EI)

37.  Shengjun Zhou, Bin Cao and Sheng liu. Integration of GaN Thin Film and Dissimilar Substrate Material by Au-Sn Wafer Bonding and CMP. International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2009 (Oral Presentation). (EI)

38.  Shengjun Zhou, Zhaohui Chen, Sheng liu. Fabrication of Thin-film LEDs by Au-Sn Wafer Bonding & CMP. 6th China International Forum on Solid State Lighting, 2009 (Poster).

39.  Shengjun Zhou, Chuan Liu, Xuefang Wang, Xiaobing Luo, Sheng Liu. Integrated Process for Silicon Wafer Thinning. 61th Electronic Components and Technology Conference (ECTC), 2011 (Poster Presentation). (EI)

40.  Sheng Liu, Shengjun Zhou, Kai Wang, Zhaohui Chen, and Xiaobing Luo. Several Co-design Issues Using DfX for Solid State Lighting. 2011 ICEPT-HDP. (EI)

41.  Cao Li, Shengjun Zhou, Chang Hu, Xuefang Wang, Sheng Liu. Novel Design of Handling System for Silicon Wafer Thinning. 2011 ICEPT-HDP. (EI)

42.  Zhaohui Chen, Shengjun Zhou, and Sheng Liu. Expert advisor for integrated virtual manufacturing and reliability for TSV/SiP based modules. 61th Electronic Components and Technology Conference (ECTC), 2011 (Oral Presentation). (EI) 

43.  Shengjun Zhou,and Sheng Liu. In situ measurement and binning system of LED for improved color consistency. 2011 ICEPT-HDP. (EI)

44.  Cao Li, Xuefang Wang, Mingxiang Chen, Shengjun Zhou,Yaping Lv, and Sheng Liu. Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology. 63rd Electronic Components and Technology Conference (ECTC), 2013. (EI)

45.  Shengjun Zhou, Jiajiang Lv, Yingce Liu, Shufang Wang, Fang Fang, Hongpo Hu, Qingyong Zhang, Shu Yuan, Sheng Liu, Han Ding, Integrated Manufacturing Process for Highly Efficient and Reliable High Power InGaN/GaN Light-emitting Diodes, 11th International Conference On Nitride Semiconductors (ICNS-11), 2015.

46.  Hongpo Hu, and Shengjun Zhou, Efficiency enhancement of nitride-based ultraviolet light-emitting diodes with reactive magnetron sputtered AlN nucleation layer on patterned sapphire substrate, International Workshop on UV Materials and Devices (IWUMD-2016), July 27-31, 2016, Beijing, China.

专利

1.      金属电极具有阵列型微结构的发光二极管及其制造方法,中国发明专利,专利号:ZL 201210349636.8

2.      高压直流氮化镓基发光二极管及其制造方法,中国发明专利,申请号:201511031187.2

3.      一种紫外发光二极管芯片及其制备方法,中国发明专利,申请号:201610103621.1

4.      一种倒装芯片电极及其制备方法,中国发明专利,申请号:201610954442.9

5.      一种LED芯片透明电极及其制造方法,中国发明专利,申请号:201610952684.4

6.      一种半导体发光器件及其制备方法,中国发明专利,申请号:201710093011.2

7.      紫外发光二极管外延结构及其制备,中国发明专利,申请号:201710161944.0

英文著作和会议论文集

●  Proceedings of 2016 17th International Conference on Electronic Packaging Technology (ICEPT), ISBN: 978-1-5090-1396-8

●  主笔英文专著<<LED Packaging for Lighting Applications: Design, Manufacturing, and Testing>>第七章的内容, John Wiley & Sons 出版社

 

主持科研项目

●  国家重点研发计划—激光高性能连接技术与装备(Grant No. 2017YFB1104900)子课题负责人

●  国家自然科学基金(面上项目)—深紫外LED芯片金属线网格透明电极与高效出光结构制造的关键技术研究(Grant No. 51675386)项目总负责人

●  国家自然科学基金(青年基金)—大尺寸高压直流LED芯片制造的关键技术研究(Grant No. 51305266)项目总负责人

●  国家自然科学基金(NSFC-广东联合重点项目)—晶圆级超大电流密度的3D LED直接白光芯片和芯片级封装制造(Grant No. U1501241)子课题负责人

●  国家863计划项目—基于失效机理的LED 照明系统可靠性与可控寿命

技术研究(Grant No. 2015AA03A101)子课题共同负责人

●  博士后基金—高效率氮化物大功率LED芯片设计与制造技术研究(Grant No. 12R21413900)项目总负责人

●  广东省部产学研结合项目—新型高速光谱仪关键技术及其在LED荧光粉在线测试中的应用(Grant No. 2012B091100308)项目总负责人

●  佛山市院市合作项目—新型大功率LED封装设备(球面成型机的研究及产业化)(Grant No. 2012HY100332)项目总负责人

参与科研项目

●  国家863计划项目-基于图形衬底的高效白光LED外延芯片产业化制备技术研究

●  国家863计划项目—应用导向型大功率白光LED可靠性及加速老化寿命试验方法研究

●  国家自然科学基金重点项目—大功率LED制造中的关键科学问题

●  粤港关键领域重点突破项目—全自动表面贴装LED测试分选机

●  国家重大科技专项“极大规模集成电路制造装备及成套工艺”的子项目—三维及系统级封装(SIP)技术的研究